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AP02N40H-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP02N40H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
RDS(ON)
400V
5Ω
G
ID
1.6A
S
Description
AP02N40 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G D S TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
400
V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
+30
V
1.6
A
1
A
3
A
33
W
5
mJ
IAR
TSTG
TJ
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
1
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Data & specifications subject to change without notice
Value
3.8
62.5
Unit
℃/W
℃/W
1
201501063