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AP01N60P Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP01N60P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Dynamic dv/dt Rating
â¼ Repetitive Avalanche Rated
â¼ Fast Switching
â¼ Simple Drive Requirement
â¼ RoHS Compliant
GD
S
TO-220
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
BVDSS
RDS(ON)
ID
G
600V
8Ω
1.6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
mJ
A
mJ
â
â
Max.
Max.
Value
3.2
62
Units
â/W
â/W
200705051-1/4
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