AP01N60J-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristics

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP01N60J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
600V
R_DS(ON)
8Ω
G
I_D
1.6A
S
Description
AP01N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The straight lead version TO-251 package is widely preferred for all
commercial-industrial through hole applications.
G
DS
TO-251(J)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
600
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy²
+30
V
1.6
A
1
A
6
A
39
W
13
mJ
I_AR
Avalanche Current
1.6
A
E_AR
T_STG
T_J
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
0.5
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.2
110
Units
℃/W
℃/W
1
201501064