AP01L60T Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE

AP01L60T
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
S
Description
BV_DSS
R_DS(ON)
I_D
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
G
DS
TO-92
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
± 30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Max.
Value
150
Unit
℃/W
200530031