AP01L60T-H-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristics

Advanced Power
Electronics Corp.
AP01L60T-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
BV_DSS
R_DS(ON)
I_D
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
700V
13.5Ω
160mA
TO-92
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
. Parameter
Rating
Units
V_DS
Drain-Source Voltage
700
V
V_GS
I_D@T_A=25℃
I_D@T_A=100℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+30
V
160
mA
100
mA
300
mA
0.83
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
150
Unit
℃/W
1
201501063