AP01L60T-H-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristics

Advanced Power
Electronics Corp.
AP01L60T-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
BV_DSS
R_DS(ON)
I_D
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
700V
13.5Ω
160mA
TO-92
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_A=25℃
I_D@T_A=100℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
150
Unit
℃/W
1
201301112