R11-0834 Datasheet, PDF (10/16 Pages) A-Data Technology – AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits)

AD3R1600C4G11
DDR3-1600(CL11) 240-Pin R-DIMM
4GB(512M x 72-bits)
Absolute Maximum Ratings：
Parameter
Voltage on VDD supply relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on any pin relative to Vss
Storage temperature
Note: DDR3 SDRAM component specification.
Symbol
VDD
VDDQ
VIN, Vout
TStg
Value
Unit
-0.4 ~ 1.975
V
-0.4 ~1.975
V
-0.4 ~ 1.975
V
-55 ~ +100
℃
Operation Temperature Condition
Parameter
Symbol
Value
Unit
Note
Normal Operating Temperature Range
TC
0~+85
℃
1
Extended Temperature Range (Optional)
TC
+85~+95
℃
1
Note: (1) If the DRAM case temperature is above 85 ℃, the Auto-Refresh command interval has to be reduced to tREFI=3.9us.
DC Operating Condition：
Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85 ℃
Parameter
Supply Voltage
Symbol
VDD
Min
1.425
Max
1.575
VDDSPD
3
3.6
Supply Voltage for Output
VDDQ
1.425
1.575
I/O Reference Voltage(CMD/ADD)
VREFCA, (DC)
0.49 x VDDQ
0.51 x VDDQ
I/O Reference Voltage(DQ)
VREFDQ, (DC)
0.49 x VDDQ
0.51 x VDDQ
Termination Voltage
VTT
VDDQ/2 - TBD
VDDQ/2 +TBD
Note: (1) Under all conditions VDDQ must be less than or equal to VDD.
(2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
(3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD
(for reference: approx. ±15mV)
(4) For reference: approx. VDD/2 ±15mV
Unit
Note
V
1,2
V
V
1,2
V
3,4
V
3,4
V
10